Optical switching at ZnSe–Ga interfaces via nanoscale light-induced metallisation
نویسندگان
چکیده
A structural transformation induced by optical impulse excitation of only a few mJ/cm fluence affecting the nanoscale surface melt layer of gallium at a ZnSe–gallium interface leads to a fast, substantial and fully reversible change in reflectivity of up to 50%. Recovery occurs within a few ls after excitation is withdrawn and less than 1 ls at temperatures more than 4 K below gallium s melting point. 2005 Elsevier B.V. All rights reserved. PACS: 190.4350; 190.4720
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